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Title:InAlN/AlGaN增强型高电子迁移率晶体管及其制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:薛军帅

Application Number:201410570899

Number of Inventors:4

Service Invention or Not:No

Application Date:2014-10-23

Authorization Date:2017-02-15

Date:2020-06-04