Sun Rujun

Associate professor  
Supervisor of Master's Candidates

Name (Simplified Chinese):孙汝军

Name (English):Sun Rujun

Name (Pinyin):SUNRUJUN

E-Mail:

Date of Employment:2021-10-01

Education Level:With Certificate of Graduation for Doctorate Study

Gender:Female

Contact Information:

Professional Title:Associate professor

Status:On duty

Alma Mater:清华大学

College:微电子学院,微电路与器件系

School/Department:微电子学院


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  • Personal Profile

    孙汝军,副教授、硕士生导师,省级青年人才。

    西安电子科技大学,微电子学院,菁英副教授岗位,2021.10-今

    University of Utah,美国,ECE,博士后,2019.5-2021.8

    University of Utah,美国,MSE,2016.9-2017.8,国家公派联合培养博士生

    清华大学,博士,MSE,2018

    湖南大学,学士,MSE,2013

    已在IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied physics letters, Solar Energy Materials and Solar Cells等国际高水平期刊以第一作者发表12篇论文,主持国家自然科学基金青年基金项目、科研启动经费项目和基本科研业务费等,参与国家自然科学基金、国家重点研发计划等;在国际会议上作口头报告9次,且在2019 IEEE 46th PVSC meeting分会场共同主持人。为APL materials, Applied physics letters, Solar energy materials and solar cells,Journal of semiconductors等期刊审稿人。

    隶属郝跃院士研究团队!

    招收2026级研究生2名,欢迎感兴趣的本科生联系,邮箱:sunrujun@ynyjxx.cn

    招收研究生的基本要求(既是对学生的期待,也是本人的自我要求)

    (1)为人诚恳;(2)有好奇心和韧劲儿;(3)比较自律,执行力强。


    研究兴趣:超宽禁带半导体电子态缺陷表征与调控

    研究方向:

    1、紫外光电传感器

    2、超宽禁带半导体器件

    3、电子态缺陷光电学表征与器件可靠性

    代表性论文:

    1. R. Sun#, A. Bhattacharyya, M. Saleh, S. Krishnamoorthy, M. A. Scarpulla#, Influences of orientation and remote O2 plasma exposure on the interface properties of SiO2/β-Ga2O3 MOS capacitors, IEEE Transactions on Electron Devices, vol. 70, no. 3, pp. 1188-1193, March 2023, doi: 10.1109/TED.2023.3235322

    2. Rujun Sun#, Andrew R. Balog, Haobo Yang, Nasim Alem, Michael A. Scarpulla#, Degradation of β-Ga2O3 vertical Ni/Au Schottky diodes under forward bias, IEEE Electron Device Letters, vol. 44, no. 5, pp. 725-728, MAY 2023, doi: 10.1109/LED.2023.3258644

    3. R. Sun, Y.K. Ooi, A. Bhattacharyya, M. Saleh, S. Krishnamoorthy, K.G. Lynn, M.A. Scarpulla, Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped b-Ga2O3 crystals, Appl. Phys. Lett., 117 (2020), 104. (Special issue: Ultrawide Bandgap Semiconductors)

    4. R. Sun, Y.K. Ooi, P.T. Dickens, K.G. Lynn, M.A. Scarpulla, On the origin of red luminescence from iron-doped b-Ga2O3 bulk crystals, Appl. Phys. Lett., 117 (2020) 052101. (Special issue: Ultrawide Bandgap Semiconductors)

    5. R. Sun, D. Zhuang, M. Zhao, Q. Gong, M. Scarpulla, Y. Wei, G. Ren, Y. Wu, Beyond 11% efficient Cu2ZnSn(Se,S)4 thin film solar cells by cadmium alloying, Sol. Energy Mater. Sol. Cells, 174 (2018) 494-498.


    http://web.ynyjxx.cn/sunrujun/index.html

    Researchgate: http://www.researchgate.net/profile/Sun-Rujun

    Google scholar: http://scholar.google.com/citations?user=fmp6nf8AAAAJ

    ORCID: http://orcid.org/0000-0001-5505-6659